ArticleThe journal of physical chemistry. C, Nanomaterials and interfaces2017
Mechanically and Electrically Robust Self-Assembled Monolayers for Large-Area Tunneling Junctions.
Article in The journal of physical chemistry. C, Nanomaterials and interfaces, 2017. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 9 papers.
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Who cites it
9 citing papers in PubMed.
- Odd-even effects in molecular junctions: A Solomonic resolution of conflicting reports on conductance trends, metal specificity, and microscopic origin.Smart molecules : open access · 2026Article
- Enhancing the Pressure-Sensitive Electrical Conductance of Self-Assembled Monolayers.ACS applied materials & interfaces · 2024Article
- Optimised power harvesting by controlling the pressure applied to molecular junctions.Chemical science · 2021Article
- Room temperature conductance switching in a molecular iron(iii) spin crossover junction.Chemical science · 2020Article
- Understanding the Role of Parallel Pathways via In-Situ Switching of Quantum Interference in Molecular Tunneling Junctions.Angewandte Chemie (International ed. in English) · 2020Article
- Thiol-free self-assembled oligoethylene glycols enable robust air-stable molecular electronics.Nature materials · 2020Article
- Systematic experimental study of quantum interference effects in anthraquinoid molecular wires.Nanoscale advances · 2019Article
- Soft Nondamaging Contacts Formed from Eutectic Ga-In for the Accurate Determination of Dielectric Constants of Organic Materials.Chemistry of materials : a publication of the American Chemical Society · 2018Article
- Controlling destructive quantum interference in tunneling junctions comprising self-assembled monolayersChemical science · 2018Article
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Authors and funding
7 authors.
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No grant is acknowledged in the PubMed record.
Abstract
This paper examines the relationship between mechanical deformation and the electronic properties of self-assembled monolayers (SAMs) of the oligothiophene 4-([2,2':5',2″:5″,2‴-quaterthiophen]-5-yl)butane-1-thiol (T4C4) in tunneling junctions using conductive probe atomic force microscopy (CP-AFM) and eutectic Ga-In (EGaIn). We compared shifts in conductivity, transition voltages of T4C4 with increasing AFM tip loading force to alkanethiolates. While these shifts result from an increasing tilt angle from penetration of the SAM by the AFM tip for the latter, we ascribe them to distortions of the π system present in T4C4, which is more mechanically robust than alkanethiolates of comparable length; SAMs comprising T4C4 shows about five times higher Young's modulus than alkanethiolates. Density functional theory calculations confirm that mechanical deformations shift the barrier height due to changes in the frontier orbitals caused by small rearrangements to the conformation of the quaterthiophene moiety. The mechanical robustness of T4C4 manifests as an increased tolerance to high bias in large-area EGaIn junctions suggesting that electrostatic pressure plays a significant role in the shorting of molecular junctions at high bias.
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