ArticleScientific reports2017
Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy.
Article in Scientific reports, 2017. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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Who cites it
4 citing papers in PubMed.
- Structure Defects in CVD-Grown Silicon Carbide Epitaxial Wafers: From Fundamental Principles to Advanced Reduction Strategies.Micromachines · 2026Review
- Highly Efficient Tribocatalysis of Superhard SiC for Water Purification.Nanomaterials (Basel, Switzerland) · 2025Article
- Liquid-Phase Exfoliation of Bismuth Telluride Iodide (BiTeI): Structural and Optical Properties of Single-/Few-Layer Flakes.ACS applied materials & interfaces · 2022Article
- Substrate induced nanoscale resistance variation in epitaxial graphene.Nature communications · 2020Article
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Authors and funding
5 authors.
Funding
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Abstract
Although silicon carbide is a highly promising crystalline material for a wide range of electronic devices, extended and point defects which perturb the lattice periodicity hold deep implications with respect to device reliability. There is thus a great need for developing new methods that can detect silicon carbide defects which are detrimental to device functionality. Our experiment demonstrates that polarization-resolved second harmonic generation microscopy can extend the efficiency of the "optical signature" concept as an all-optical rapid and non-destructive set of investigation methods for the differentiation between hexagonal and cubic stacking faults in silicon carbide. This technique can be used for fast and in situ characterization and optimization of growth conditions for epilayers of silicon carbide and similar materials.
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