ArticleACS nano2017
Introducing Overlapping Grain Boundaries in Chemical Vapor Deposited Hexagonal Boron Nitride Monolayer Films.
Article in ACS nano, 2017. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
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Who cites it
5 citing papers in PubMed.
- Ubiquitous Antiparallel Domains in 2D Hexagonal Boron Nitride Uncovered by Interferometric Nonlinear Optical Imaging.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Realizing Scalable Chemical Vapor Deposition of Monolayer Graphene Films on Iron with Concurrent Surface Hardening byACS applied materials & interfaces · 2026Article
- Fast crystallographic texture mapping of atomically thin hBN films on Ni(111) using secondary electron contrast.Nanoscale advances · 2025Article
- Two-Dimensional Materials in Large-Areas: Synthesis, Properties and Applications.Nano-micro letters · 2020Review
- Atomic-Scale in Situ Observations of Crystallization and Restructuring Processes in Two-Dimensional MoSACS nano · 2018Article
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Authors and funding
7 authors.
Funding
Abstract
We demonstrate the growth of overlapping grain boundaries in continuous, polycrystalline hexagonal boron nitride (h-BN) monolayer films via scalable catalytic chemical vapor deposition. Unlike the commonly reported atomically stitched grain boundaries, these overlapping grain boundaries do not consist of defect lines within the monolayer films but are composed of self-sealing bilayer regions of limited width. We characterize this overlapping h-BN grain boundary structure in detail by complementary (scanning) transmission electron microscopy techniques and propose a catalytic growth mechanism linked to the subsurface/bulk of the process catalyst and its boron and nitrogen solubilities. Our data suggest that the overlapping grain boundaries are comparatively resilient against deleterious pinhole formation associated with grain boundary defect lines and thus may reduce detrimental breakdown effects when polycrystalline h-BN monolayer films are used as ultrathin dielectrics, barrier layers, or separation membranes.
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