Evidence map›Paper›PMID 28298631›Full record

ArticleScientific reports2017

Considerable knock-on displacement of metal atoms under a low energy electron beam.

Hengfei Gu, Geping Li, Chengze Liu, Fusen Yuan, Fuzhou Han, Lifeng Zhang, Songquan Wu

Abstract read
In one paragraph

Article in Scientific reports, 2017. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.

0numbers the graph read from it
0cells of the map it votes in
5citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

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Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

5 citing papers in PubMed.

  1. Article
  2. In Situ Visualization of Electron Beam-Driven High-Entropy Alloy Crystallization.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  3. Article
  4. Review
  5. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors.

Hengfei GuInstitute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, People's Republic of China.
Geping LiInstitute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, People's Republic of China. gpli@imr.ac.cn.
Chengze LiuInstitute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, People's Republic of China.
Fusen YuanInstitute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, People's Republic of China.
Fuzhou HanInstitute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, People's Republic of China.
Lifeng ZhangInstitute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, People's Republic of China.
Songquan WuKey Laboratory of Optoelectronic Materials Chemical and Physics, Fujian Institute of Research on The Structure of Matter, Chinese Academy of Sciences, 155 Yangqiao Road West, Fuzhou, 350002, People's Republic of China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Under electron beam irradiation, knock-on atomic displacement is commonly thought to occur only when the incident electron energy is above the incident-energy threshold of the material in question. However, we report that when exposed to intense electrons at room temperature at a low incident energy of 30 keV, which is far below the theoretically predicted incident-energy threshold of zirconium, Zircaloy-4 (Zr-1.50Sn-0.25Fe-0.15Cr (wt.%)) surfaces can undergo considerable displacement damage. We demonstrate that electron beam irradiation of the bulk Zircaloy-4 surface resulted in a striking radiation effect that nanoscale precipitates within the surface layer gradually emerged and became clearly visible with increasing the irradiation time. Our transmission electron microscope (TEM) observations further reveal that electron beam irradiation of the thin-film Zircaly-4 surface caused the sputtering of surface α-Zr atoms, the nanoscale atomic restructuring in the α-Zr matrix, and the amorphization of precipitates. These results are the first direct evidences suggesting that displacement of metal atoms can be induced by a low incident electron energy below threshold. The presented way to irradiate may be extended to other materials aiming at producing appealing properties for applications in fields of nanotechnology, surface technology, and others.

Identifiers

PMID28298631
PMCPMC5428036

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