ArticleScientific reports2017
Large-area growth of multi-layer hexagonal boron nitride on polished cobalt foils by plasma-assisted molecular beam epitaxy.
Article in Scientific reports, 2017. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 10 papers.
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10 citing papers in PubMed.
- Ferroelectricity from Spontaneous Symmetry Breaking in Amorphous BN-Based Thin Films Grown via Atomic Layer Annealing.Crystal growth & design · 2026Article
- Growth of Noncentrosymmetric Two-Dimensional Single Crystals.Precision chemistry · 2024Review
- Turn of the decade: versatility of 2D hexagonal boron nitride.JPhys materials · 2021Article
- Two-Dimensional Materials in Large-Areas: Synthesis, Properties and Applications.Nano-micro letters · 2020Review
- The influence of an interfacial hBN layer on the fluorescence of an organic molecule.Beilstein journal of nanotechnology · 2020Article
- Dynamic Hierarchical Self-Assemble Small Molecule Structure Hexabenzocoronene for the High-Performance Anodes Lithium Ion Storage.Nanoscale research letters · 2019Article
- Hexagonal Boron Nitride Functionalized with Au Nanoparticles-Properties and Potential Biological Applications.Nanomaterials (Basel, Switzerland) · 2018Article
- High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes.Materials (Basel, Switzerland) · 2018Article
- Self-assembled Cubic Boron Nitride Nanodots.Scientific reports · 2017Article
- Introducing Overlapping Grain Boundaries in Chemical Vapor Deposited Hexagonal Boron Nitride Monolayer Films.ACS nano · 2017Article
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6 authors.
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Abstract
Two-dimensional (2D) hexagonal boron nitride (h-BN), which has a similar honeycomb lattice structure to graphene, is promising as a dielectric material for a wide variety of potential applications based on 2D materials. Synthesis of high-quality, large-size and single-crystalline h-BN domains is of vital importance for fundamental research as well as practical applications. In this work, we report the growth of h-BN films on mechanically polished cobalt (Co) foils using plasma-assisted molecular beam epitaxy. Under appropriate growth conditions, the coverage of h-BN layers can be readily controlled by growth time. A large-area, multi-layer h-BN film with a thickness of 5~6 nm is confirmed by Raman spectroscopy, scanning electron microscopy, X-ray photoelectron spectroscopy and transmission electron microscopy. In addition, the size of h-BN single domains is 20~100 μm. Dielectric property of as-grown h-BN film is evaluated by characterization of Co(foil)/h-BN/Co(contact) capacitor devices. Breakdown electric field is in the range of 3.0~3.3 MV/cm, which indicates that the epitaxial h-BN film has good insulating characteristics. In addition, the effect of substrate morphology on h-BN growth is discussed regarding different domain density, lateral size, and thickness of the h-BN films grown on unpolished and polished Co foils.
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