ArticleScience and technology of advanced materials2014
Properties of anodic oxides grown on a hafnium-tantalum-titanium thin film library.
Article in Science and technology of advanced materials, 2014. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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3 citing papers in PubMed, 25 citations in OpenAlex.
- Threshold Switching in Forming-Free Anodic Memristors Grown on Hf-Nb Combinatorial Thin-Film Alloys.Nanomaterials (Basel, Switzerland) · 2022Article
- Basic properties mapping of anodic oxides in the hafnium-niobium-tantalum ternary system.Science and technology of advanced materials · 2018Article
- Modeling of metastable phase formation diagrams for sputtered thin films.Science and technology of advanced materials · 2016Article
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4 authors at 2 institutions in 2 countries.
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Abstract
A ternary thin film combinatorial materials library of the valve metal system Hf-Ta-Ti obtained by co-sputtering was studied. The microstructural and crystallographic analysis of the obtained compositions revealed a crystalline and textured surface, with the exception of compositions with Ta concentration above 48 at.% which are amorphous and show a flat surface. Electrochemical anodization of the composition spread thin films was used for analysing the growth of the mixed surface oxides. Oxide formation factors, obtained from the potentiodynamic anodization curves, as well as the dielectric constants and electrical resistances, obtained from electrochemical impedance spectroscopy, were mapped along two dimensions of the library using a scanning droplet cell microscope. The semiconducting properties of the anodic oxides were mapped using Mott-Schottky analysis. The degree of oxide mixing was analysed qualitatively using x-ray photoelectron spectroscopy depth profiling. A quantitative analysis of the surface oxides was performed and correlated to the as-deposited metal thin film compositions. In the concurrent transport of the three metal cations during oxide growth a clear speed order of Ti > Hf > Ta was proven.
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