ArticleBeilstein journal of nanotechnology2016
Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography.
Article in Beilstein journal of nanotechnology, 2016. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
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5 citing papers in PubMed.
- Design and Fabrication of Silicon Pressure Sensors Based on Wet Etching Technology.Micromachines · 2025Article
- Article
- Study on Electrical and Mechanical Properties of Double-End Supported Elastic Substrate Prepared by Wet Etching Process.Micromachines · 2024Article
- Resistless EUV lithography: Photon-induced oxide patterning on silicon.Science advances · 2023Article
- Study on the Physical Properties of a SiNW Biosensor to the Sensitivity of DNA Detection.Materials (Basel, Switzerland) · 2021Article
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Abstract
The optimization of etchant parameters in wet etching plays an important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is studied herein. TMAH (25 wt %) with different IPA concentrations (0, 10, 20, and 30 vol %) and etching time durations (30, 40, and 50 s) were investigated. The relationships between etching depth and width, and etching rate and surface roughness of silicon nanowires were characterized in detail using atomic force microscopy (AFM). The obtained results indicate that increased IPA concentration in TMAH produced greater width of the silicon nanowires with a smooth surface. It was also observed that the use of a longer etching time causes more unmasked silicon layers to be removed. Importantly, throughout this study, wet etching with optimized parameters can be applied in the design of the devices with excellent performance for many applications.
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