ArticleProceedings of SPIE--the International Society for Optical Engineering2016
Silicon technologies for arrays of Single Photon Avalanche Diodes.
Article in Proceedings of SPIE--the International Society for Optical Engineering, 2016. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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Who cites it
4 citing papers in PubMed.
- A Scaling Law for SPAD Pixel Miniaturization.Sensors (Basel, Switzerland) · 2021Article
- Custom silicon technology for SPAD-arrays with red-enhanced sensitivity and low timing jitter.Optics express · 2021Article
- Single-photon avalanche diode imagers in biophotonics: review and outlook.Light, science & applications · 2019Review
- Red-Enhanced Photon Detection Module Featuring a 32 × 1 Single-Photon Avalanche Diode Array.IEEE photonics technology letters : a publication of the IEEE Laser and Electro-optics Society · 2018Article
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Authors and funding
4 authors.
Funding
Abstract
In order to fulfill the requirements of many applications, we recently developed a new technology aimed at combining the advantages of traditional thin and thick silicon Single Photon Avalanche Diodes (SPAD). In particular we demonstrated single-pixel detectors with a remarkable improvement in the Photon Detection Efficiency in the red/near-infrared spectrum (e.g. 40% at 800nm) while maintaining a timing jitter better than 100ps. In this paper we discuss the limitations of such Red-Enhanced (RE) technology from the point of view of the fabrication of small arrays of SPAD and we propose modifications to the structure aimed at overcoming these issues. We also report the first preliminary experimental results attained on devices fabricated adopting the improved structure.
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