ArticleScientific reports2016
Bound exciton and free exciton states in GaSe thin slab.
Article in Scientific reports, 2016. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.
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Who cites it
7 citing papers in PubMed.
- Thickness-Dependent Optical Properties and Exciton Recombination Dynamics in the GaSeACS omega · 2026Article
- Quantum Emitters Induced by High Pressure and UV Laser Irradiation in Multilayer GaSe.ACS omega · 2025Article
- A Systematic Study of the Temperature Dependence of the Dielectric Function of GaSe Uniaxial Crystals from 27 to 300 K.Nanomaterials (Basel, Switzerland) · 2024Article
- Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy.Scientific reports · 2020Article
- Bright and fast scintillations of an inorganic halide perovskite CsPbBrScientific reports · 2020Article
- In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects.Nanoscale advances · 2020Review
- Screw-Dislocation-Driven Growth Mode in Two Dimensional GaSe on GaAs(001) Substrates Grown by Molecular Beam Epitaxy.Scientific reports · 2019Article
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Authors and funding
6 authors.
Funding
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Abstract
The photoluminescence (PL) and absorption experiments have been performed in GaSe slab with incident light polarized perpendicular to c-axis of sample at 10 K. An obvious energy difference of about 34 meV between exciton absorption peak and PL peak (the highest energy peak) is observed. By studying the temperature dependence of PL and absorption spectra, we attribute it to energy difference between free exciton and bound exciton states, where main exciton absorption peak comes from free exciton absorption, and PL peak is attributed to recombination of bound exciton at 10 K. This strong bound exciton effect is stable up to 50 K. Moreover, the temperature dependence of integrated PL intensity and PL lifetime reveals that a non-radiative process, with activation energy extracted as 0.5 meV, dominates PL emission.
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