ArticleScientific reports2016
Nanoforging Single Layer MoSe2 Through Defect Engineering with Focused Helium Ion Beams.
Article in Scientific reports, 2016. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 14 papers.
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Who cites it
14 citing papers in PubMed.
- Multiscale Manufacturing of Organic Electronic Materials.Advanced materials (Deerfield Beach, Fla.) · 2026Review
- Electroluminescent vertical tunneling junctions based on WSeProceedings of the National Academy of Sciences of the United States of America · 2024Article
- A Comparative Study of Gallium-, Xenon-, and Helium-Focused Ion Beams for the Milling of GaN.Nanomaterials (Basel, Switzerland) · 2023Article
- Optical Properties of MoSeACS applied materials & interfaces · 2023Article
- Strong quenching of dye fluorescence in monomeric perylene orange/TMDC hybrid structures.Nanoscale advances · 2023Article
- Reduced dopant-induced scattering in remote charge-transfer-doped MoSScience advances · 2022Article
- Engineering the Crack Structure and Fracture Behavior in Monolayer MoSAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2022Article
- Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications.Chemical science · 2022Review
- A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope.Beilstein journal of nanotechnology · 2021Review
- Two-Dimensional Molybdenum Diselenide Tuned by Bimetal Co/Ni Nanoparticles for Oxygen Evolution Reaction.ACS omega · 2020Article
- Dynamic properties of high-TScientific reports · 2020Article
- Quantification of defects engineered in single layer MoSRSC advances · 2020Article
- Atomic Structure of Intrinsic and Electron-Irradiation-Induced Defects in MoTeChemistry of materials : a publication of the American Chemical Society · 2018Article
- Chemical Changes in Layered Ferroelectric Semiconductors Induced by Helium Ion Beam.Scientific reports · 2017Article
Corrections and comments
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Authors and funding
14 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Development of devices and structures based on the layered 2D materials critically hinges on the capability to induce, control, and tailor the electronic, transport, and optoelectronic properties via defect engineering, much like doping strategies have enabled semiconductor electronics and forging enabled introduction the of iron age. Here, we demonstrate the use of a scanning helium ion microscope (HIM) for tailoring the functionality of single layer MoSe2 locally, and decipher associated mechanisms at the atomic level. We demonstrate He(+) beam bombardment that locally creates vacancies, shifts the Fermi energy landscape and increases the Young's modulus of elasticity. Furthermore, we observe for the first time, an increase in the B-exciton photoluminescence signal from the nanoforged regions at the room temperature. The approach for precise defect engineering demonstrated here opens opportunities for creating functional 2D optoelectronic devices with a wide range of customizable properties that include operating in the visible region.
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Registered trials
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