Evidence map›Paper›PMID 27381511›Full record

ArticleScientific reports2016

Quantum memristors.

P Pfeiffer, I L Egusquiza, M Di Ventra, M Sanz, E Solano

Abstract read
In one paragraph

Article in Scientific reports, 2016. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 12 papers.

0numbers the graph read from it
0cells of the map it votes in
12citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

12 citing papers in PubMed.

  1. Proposal for Trapped-Ion Quantum Memristor.Entropy (Basel, Switzerland) · 2023
    Article
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  4. Quantum Memristors in Frequency-Entangled Optical Fields.Materials (Basel, Switzerland) · 2020
    Article
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors.

P PfeifferDepartment of Physical Chemistry, University of the Basque Country UPV/EHU, Apartado 644, E-48080 Bilbao, Spain.
I L EgusquizaDepartment of Theoretical Physics and History of Science, University of the Basque Country UPV/EHU, Apartado 644, E-48080 Bilbao, Spain.
M Di VentraDepartment of Physics, University of California, San Diego, La Jolla, CA 92093, USA.
M SanzDepartment of Physical Chemistry, University of the Basque Country UPV/EHU, Apartado 644, E-48080 Bilbao, Spain.
E SolanoDepartment of Physical Chemistry, University of the Basque Country UPV/EHU, Apartado 644, E-48080 Bilbao, Spain.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Technology based on memristors, resistors with memory whose resistance depends on the history of the crossing charges, has lately enhanced the classical paradigm of computation with neuromorphic architectures. However, in contrast to the known quantized models of passive circuit elements, such as inductors, capacitors or resistors, the design and realization of a quantum memristor is still missing. Here, we introduce the concept of a quantum memristor as a quantum dissipative device, whose decoherence mechanism is controlled by a continuous-measurement feedback scheme, which accounts for the memory. Indeed, we provide numerical simulations showing that memory effects actually persist in the quantum regime. Our quantization method, specifically designed for superconducting circuits, may be extended to other quantum platforms, allowing for memristor-type constructions in different quantum technologies. The proposed quantum memristor is then a building block for neuromorphic quantum computation and quantum simulations of non-Markovian systems.

Identifiers

PMID27381511
PMCPMC4933948

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.