Evidence map›Paper›PMID 26831681›Full record

ArticleNanoscale research letters2016

Effect of Graphene Oxide on the Properties of Porous Silicon.

Igor B Olenych, Olena I Aksimentyeva, Liubomyr S Monastyrskii, Yulia Yu Horbenko, Maryan V Partyka, Andriy P Luchechko, Lidia I Yarytska

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nanoscale research letters, 2016. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.

0numbers the graph read from it
0cells of the map it votes in
4citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

4 citing papers in PubMed.

  1. Review
  2. Review
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors.

Igor B OlenychRadioelectronics and Computer Systems Department, Ivan Franko National University of Lviv, 50 Dragomanov Street, 79005, Lviv, Ukraine. iolenych@gmail.com.
Olena I AksimentyevaPhysical and Colloidal Chemistry Department, Ivan Franko National University of Lviv, 6 Kyrylo and Mefodiy Street, 79005, Lviv, Ukraine. aksimen@ukr.net.
Liubomyr S MonastyrskiiRadioelectronics and Computer Systems Department, Ivan Franko National University of Lviv, 50 Dragomanov Street, 79005, Lviv, Ukraine. monastyr@electronics.lnu.edu.ua.
Yulia Yu HorbenkoPhysical and Colloidal Chemistry Department, Ivan Franko National University of Lviv, 6 Kyrylo and Mefodiy Street, 79005, Lviv, Ukraine. y_bilka@ukr.net.
Maryan V PartykaSolid State Physics Department, Ivan Franko National University of Lviv, 50 Dragomanov Street, 79005, Lviv, Ukraine. maryan.partyka@gmail.com.
Andriy P LuchechkoElectronics Department, Ivan Franko National University of Lviv, 107 Tarnavskyi Street, 79017, Lviv, Ukraine. luchechko@electronics.lnu.edu.ua.
Lidia I YarytskaThermodynamics and Physics Department, Lviv State University of Live Safety, 35 Kleparivska Street, 79000, Lviv, Ukraine. mmarykash@ukr.net.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

We studied an effect of the graphene oxide (GO) layer on the optical and electrical properties of porous silicon (PS) in hybrid PS-GO structure created by electrochemical etching of silicon wafer and deposition of GO from water dispersion on PS. With the help of scanning electron microscopy (SEM), atomic-force microscopy (AFM), and Fourier transform infrared (FTIR) spectroscopy, it was established that GO formed a thin film on the PS surface and is partly embedded in the pores of PS. A comparative analysis of the FTIR spectra for the PS and PS-GO structures confirms the passivation of the PS surface by the GO film. This film has a sufficient transparency for excitation and emission of photoluminescence (PL). Moreover, GO modifies PL spectrum of PS, shifting the PL maximum by 25 nm towards lower energies. GO deposition on the surface of the porous silicon leads to the change in the electrical parameters of PS in AC and DC modes. By means of current-voltage characteristics (CVC) and impedance spectroscopy, it is shown that the impact of GO on electrical characteristics of PS manifests in reduced capacitance and lower internal resistance of hybrid structures.

Indexed as

Current–voltage characteristicsGraphene oxideHybrid structureImpedance spectroscopyPhotoluminescencePorous silicon

Identifiers

PMID26831681
PMCPMC4735084

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.