ArticleSensors (Basel, Switzerland)2016
Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics.
Article in Sensors (Basel, Switzerland), 2016. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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2 citing papers in PubMed.
- Mechanical Stability of Amorphous Silicon Thin-Film Devices on Polyimide for Flexible Sensor Platforms.Sensors (Basel, Switzerland) · 2026Article
- A 0.026 mmMicromachines · 2020Article
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3 authors.
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Abstract
Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34-40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.
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