ArticleScientific reports2015
Nondestructive nanofabrication on Si(100) surface by tribochemistry-induced selective etching.
Article in Scientific reports, 2015. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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Who cites it
4 citing papers in PubMed, 28 citations in OpenAlex.
- Friction-induced selective etching on silicon by TMAH solution.RSC advances · 2018Article
- Fabrication of Nanoscale Pits with High Throughput on Polymer Thin Film Using AFM Tip-Based Dynamic Plowing Lithography.Nanoscale research letters · 2017Article
- Effect of crystal plane orientation on tribochemical removal of monocrystalline silicon.Scientific reports · 2017Article
- Temperature-Dependent Nanofabrication on Silicon by Friction-Induced Selective Etching.Nanoscale research letters · 2016Article
Corrections and comments
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Authors and funding
4 authors at 1 institution in 1 country.
Funding
No grant is acknowledged in the PubMed record.
Abstract
A tribochemistry-induced selective etching approach is proposed for the first time to produce silicon nanostructures without lattice damage. With a ~1 nm thick SiOx film as etching mask grown on Si(100) surface (Si(100)/SiOx) by wet-oxidation technique, nano-trenches can be produced through the removal of local SiOx mask by a SiO2 tip in humid air and the post-etching of the exposed Si in potassium hydroxide (KOH) solution. The material removal of SiOx mask and Si under low load is dominated by the tribochemical reaction at the interface between SiO2 tip and Si/SiOx sample, where the contact pressure is much lower than the critical pressure for initial yield of Si. High resolution transmission electron microscope (HRTEM) observation indicates that neither the material removal induced by tribochemical reaction nor the wet etching in KOH solution leads to lattice damage of the fabricated nanostructures. The proposed approach points out a new route in nondestructive nanofabrication.
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Registered trials
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