ArticleNature nanotechnology2015
Quantum Hall resistance standard in graphene devices under relaxed experimental conditions.
Article in Nature nanotechnology, 2015. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 35 papers.
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Who cites it
35 citing papers in PubMed.
- Quantum adiabatic transport in a quantum anomalous Hall insulator.Nature communications · 2026Article
- Companion guide to the revised technical guidelines for reliable dc measurements of the quantized Hall resistance for graphene-based devices.Metrologia · 2026Article
- Graphene's Role in Advancing Quantum Electrical Standards.Journal of applied physics · 2025Article
- A primary quantum current standard based on the Josephson and the quantum Hall effects.Nature communications · 2025Article
- Enhanced Mobility in Suspended Chemical Vapor-Deposited Graphene Field-Effect Devices in Ambient Conditions.ACS applied materials & interfaces · 2023Article
- Emerging SiC Applications beyond Power Electronic Devices.Micromachines · 2023Review
- Quantum Hall phase in graphene engineered by interfacial charge coupling.Nature nanotechnology · 2022Article
- Accurate graphene quantum Hall arrays for the new International System of Units.Nature communications · 2022Article
- High-Temperature Quantum Hall Effect in Graphite-Gated Graphene Heterostructure Devices with High Carrier Mobility.Nanomaterials (Basel, Switzerland) · 2022Article
- Abrikosov vortex corrections to effective magnetic field enhancement in epitaxial graphene.Physical review. B · 2021Article
- Graphene Quantum Hall Effect Devices for AC and DC Electrical Metrology.IEEE transactions on electron devices · 2021Article
- Onsager-Casimir frustration from resistance anisotropy in graphene quantum Hall devices.Physical review. B · 2021Article
- Direct observation of photonic Landau levels and helical edge states in strained honeycomb lattices.Light, science & applications · 2020Article
- Implementation of a graphene quantum Hall Kelvin bridge-on-a-chip for resistance calibrations.Metrologia · 2020Article
- Analysing quantized resistance behaviour in graphene CorbinoJournal of physics D: Applied physics · 2020Article
- Analytical determination of atypical quantized resistances in graphenePhysica. B, Condensed matter · 2020Article
- Comparison between Graphene and GaAs Quantized Hall Devices with a Dual Probe.IEEE transactions on instrumentation and measurement · 2020Article
- Manetoresistance of Ultralow-Hole-Density Monolayer Epitaxial Graphene Grown on SiC.Materials (Basel, Switzerland) · 2019Article
- Continuous Growth of Highly Reproducible Single-Layer Graphene Deposition on Cu Foil by Indigenously Developed LPCVD Setup.ACS omega · 2019Article
- The Quantum Hall Effect in the Era of the New SI.Semiconductor science and technology · 2019Article
Corrections and comments
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Authors and funding
11 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
The quantum Hall effect provides a universal standard for electrical resistance that is theoretically based on only the Planck constant h and the electron charge e. Currently, this standard is implemented in GaAs/AlGaAs, but graphene's electronic properties have given hope for a more practical device. Here, we demonstrate that the experimental conditions necessary for the operation of devices made of high-quality graphene grown by chemical vapour deposition on silicon carbide can be extended and significantly relaxed compared with those for state-of-the-art GaAs/AlGaAs devices. In particular, the Hall resistance can be accurately quantized to within 1 × 10(-9) over a 10 T wide range of magnetic flux density, down to 3.5 T, at a temperature of up to 10 K or with a current of up to 0.5 mA. This experimental simplification highlights the great potential of graphene in the development of user-friendly and versatile quantum standards that are compatible with broader industrial uses beyond those in national metrology institutes. Furthermore, the measured agreement of the quantized Hall resistance in graphene and GaAs/AlGaAs, with an ultimate uncertainty of 8.2 × 10(-11), supports the universality of the quantum Hall effect. This also provides evidence of the relation of the quantized Hall resistance with h and e, which is crucial for the new Système International d'unités to be based on fixing such fundamental constants of nature.
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Registered trials
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