ArticleFrontiers in neuroscience2015
Tunnel junction based memristors as artificial synapses.
Article in Frontiers in neuroscience, 2015. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
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Who cites it
5 citing papers in PubMed.
- Phase-Change Materials for Volatile Threshold Resistive Switching and Neuronal Device Applications.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Review
- Voltage-dependent plasticity of spin-polarized conductance in phenyl-based single-molecule magnetic tunnel junctions.PloS one · 2021Article
- Magnetic Tunnel Junction Mimics Stochastic Cortical Spiking Neurons.Scientific reports · 2016Article
- Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses.Frontiers in neuroscience · 2016Article
- Trends and Challenges in Neuroengineering: Toward "Intelligent" Neuroprostheses through Brain-"Brain Inspired Systems" Communication.Frontiers in neuroscience · 2016Article
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Authors and funding
9 authors.
Funding
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Abstract
We prepared magnesia, tantalum oxide, and barium titanate based tunnel junction structures and investigated their memristive properties. The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use. Here, we increased the amplitude of the resistance change from 10% up to 100%. Utilizing the memristive properties, we looked into the use of the junction structures as artificial synapses. We observed analogs of long-term potentiation, long-term depression and spike-time dependent plasticity in these simple two terminal devices. Finally, we suggest a possible pathway of these devices toward their integration in neuromorphic systems for storing analog synaptic weights and supporting the implementation of biologically plausible learning mechanisms.
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Registered trials
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