ArticleSensors (Basel, Switzerland)2015
Amorphous silicon p-i-n structure acting as light and temperature sensor.
Article in Sensors (Basel, Switzerland), 2015. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
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Who cites it
5 citing papers in PubMed.
- Tailoring Hydrogenation to Enhance Defect Suppression and Charge Transport in Hydrogenated Amorphous Silicon for Flexible Photodetectors.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- Sensitive and Compact Evanescent-Waveguide Optical Detector for Sugar Sensing in Commercial Beverages.Sensors (Basel, Switzerland) · 2023Article
- Thin-Film-Based Multifunctional System for Optical Detection and Thermal Treatment of Biological Samples.Biosensors · 2022Article
- Thin Film Differential Photosensor for Reduction of Temperature Effects in Lab-on-Chip Applications.Sensors (Basel, Switzerland) · 2016Article
- Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics.Sensors (Basel, Switzerland) · 2016Article
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Authors and funding
3 authors.
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Abstract
In this work, we propose a multi-parametric sensor able to measure both temperature and radiation intensity, suitable to increase the level of integration and miniaturization in Lab-on-Chip applications. The device is based on amorphous silicon p-doped/intrinsic/n-doped thin film junction. The device is first characterized as radiation and temperature sensor independently. We found a maximum value of responsivity equal to 350 mA/W at 510 nm and temperature sensitivity equal to 3.2 mV/K. We then investigated the effects of the temperature variation on light intensity measurement and of the light intensity variation on the accuracy of the temperature measurement. We found that the temperature variation induces an error lower than 0.55 pW/K in the light intensity measurement at 550 nm when the diode is biased in short circuit condition, while an error below 1 K/µW results in the temperature measurement when a forward bias current higher than 25 µA/cm2 is applied.
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