Evidence map›Paper›PMID 25784849›Full record

ReviewFrontiers in neuroscience2015

Plasticity in memristive devices for spiking neural networks.

Sylvain Saïghi, Christian G Mayr, Teresa Serrano-Gotarredona, Heidemarie Schmidt, Gwendal Lecerf, Jean Tomas, Julie Grollier, Sören Boyn, Adrien F Vincent, Damien Querlioz and 6 more

Abstract readReview
In one paragraph

Review in Frontiers in neuroscience, 2015. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 36 papers.

0numbers the graph read from it
0cells of the map it votes in
36citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

36 citing papers in PubMed.

  1. Article
  2. Memristor Synapse-A Device-Level Critical Review.Nanomaterials (Basel, Switzerland) · 2026
    Review
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  12. Perovskite neural trees.Nature communications · 2020
    Article
  13. Article
  14. Article
  15. Synaptic memory devices from CoO/Nb:SrTiORoyal Society open science · 2019
    Article
  16. Article
  17. Article
  18. Article
  19. Article
  20. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

16 authors.

Sylvain SaïghiLaboratoire d'Intégration du Matériau au Système, UMR CNRS 5218, Université de Bordeaux Talence, France.
Christian G MayrInstitute of Neuroinformatics, University of Zurich and ETH Zurich Zurich, Switzerland.
Teresa Serrano-GotarredonaInstituto de Microelectrónica de Sevilla, IMSE-CNM, Universidad de Sevilla and CSIC Sevilla, Spain.
Heidemarie SchmidtFaculty of Electrical Engineering and Information Technology, Technische Universität Chemnitz Chemnitz, Germany.
Gwendal LecerfLaboratoire d'Intégration du Matériau au Système, UMR CNRS 5218, Université de Bordeaux Talence, France.
Jean TomasLaboratoire d'Intégration du Matériau au Système, UMR CNRS 5218, Université de Bordeaux Talence, France.
Julie GrollierUnité Mixte de Physique CNRS/Thales, Palaiseau, France Associated to University Paris-Sud Orsay, France.
Sören BoynUnité Mixte de Physique CNRS/Thales, Palaiseau, France Associated to University Paris-Sud Orsay, France.
Adrien F VincentInstitut d'Electronique Fondamentale, Université Paris-Sud, CNRS Orsay, France.
Damien QuerliozInstitut d'Electronique Fondamentale, Université Paris-Sud, CNRS Orsay, France.
Selina La BarberaInstitut d'Electronique, Microelectronique et Nanotechnologies, UMR CNRS 8520 Villeneuve d'Ascq, France.
Fabien AlibartInstitut d'Electronique, Microelectronique et Nanotechnologies, UMR CNRS 8520 Villeneuve d'Ascq, France.
Dominique VuillaumeInstitut d'Electronique, Microelectronique et Nanotechnologies, UMR CNRS 8520 Villeneuve d'Ascq, France.
Olivier BichlerCEA, LIST, Saclay Nano-INNOV PC 172 Gif sur Yvette, France.
Christian GamratCEA, LIST, Saclay Nano-INNOV PC 172 Gif sur Yvette, France.
Bernabé Linares-BarrancoInstituto de Microelectrónica de Sevilla, IMSE-CNM, Universidad de Sevilla and CSIC Sevilla, Spain.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Memristive devices present a new device technology allowing for the realization of compact non-volatile memories. Some of them are already in the process of industrialization. Additionally, they exhibit complex multilevel and plastic behaviors, which make them good candidates for the implementation of artificial synapses in neuromorphic engineering. However, memristive effects rely on diverse physical mechanisms, and their plastic behaviors differ strongly from one technology to another. Here, we present measurements performed on different memristive devices and the opportunities that they provide. We show that they can be used to implement different learning rules whose properties emerge directly from device physics: real time or accelerated operation, deterministic or stochastic behavior, long term or short term plasticity. We then discuss how such devices might be integrated into a complete architecture. These results highlight that there is no unique way to exploit memristive devices in neuromorphic systems. Understanding and embracing device physics is the key for their optimal use.

Indexed as

hardware neural networkmemristive devicememristorneuromorphic engineeringplasticity

Identifiers

PMID25784849
PMCPMC4345885

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.