ArticleSensors (Basel, Switzerland)2015
Characterization of piezoresistive PEDOT:PSS pressure sensors with inter-digitated and cross-point electrode structures.
Article in Sensors (Basel, Switzerland), 2015. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.
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Who cites it
7 citing papers in PubMed, 47 citations in OpenAlex.
- Recent Progress of Energy-Storage-Device-Integrated Sensing Systems.Nanomaterials (Basel, Switzerland) · 2023Review
- Plasma Surface Engineering of Natural and Sustainable Polymeric Derivatives and Their Potential Applications.Polymers · 2023Review
- Recent Progress in Flexible Pressure Sensor Arrays.Nanomaterials (Basel, Switzerland) · 2022Review
- A negative piezo-conductive effect from doped semiconducting polymer thin films.Scientific reports · 2021Article
- Overcoming intra-molecular repulsions in PEDTT by sulphate counter-ion.Science and technology of advanced materials · 2021Article
- High-Performance Resistive Pressure Sensor Based on Elastic Composite Hydrogel of Silver Nanowires and Poly(ethylene glycol).Micromachines · 2018Article
- Cross-Talk Immunity of PEDOT:PSS Pressure Sensing Arrays with Gold Nanoparticle Incorporation.Scientific reports · 2017Article
Corrections and comments
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Authors and funding
5 authors at 2 institutions in 1 country.
Funding
No grant is acknowledged in the PubMed record.
Abstract
The piezoresistive characteristics of poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) pressure sensors with inter-digitated (IDE) and cross-point electrode (CPE) structures have been investigated. A small variation of the resistance of the pressure sensors with IDE without bottom indium-tin-oxide (b-ITO) film and with CPE structures was observed owing to the single carrier-conducting pathway. For the IDE pressure sensors with b-ITO, the piezoresistive characteristics at low and high pressure were similar to those of the pressure sensors with IDE without b-ITO and with CPE structures, respectively, leading to increased piezoresistive pressure sensitivity as the PEDOT:PSS film thickness decreased. A maximum sensitivity of more than 42 kΩ/Pa was achieved. When the normal pressure was applied, the increased number of conducting points or the reduced distance between the PEDOT oligomers within the PEDOT:PSS film resulted in a decrease of the resistance. The piezoresistive pressure sensors with a single carrier-conducting pathway, i.e., IDE without b-ITO and CPE structures, exhibited a small relaxation time and a superior reversible operation, which can be advantageous for fast piezoresistive response applications.
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