ArticleBiophysical journal2008
Molecular dynamics simulation of Kv channel voltage sensor helix in a lipid membrane with applied electric field.
Article in Biophysical journal, 2008. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 28 papers.
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Who cites it
28 citing papers in PubMed.
- Exploring the Conformational Changes Induced by Nanosecond Pulsed Electric Fields on the Voltage Sensing Domain of a CaMembranes · 2021Article
- The Voltage-Dependent Deactivation of the KvAP Channel Involves the Breakage of Its S4 Helix.Frontiers in molecular biosciences · 2020Article
- Roles for Countercharge in the Voltage Sensor Domain of Ion Channels.Frontiers in pharmacology · 2020Review
- Characterization of Lipid-Protein Interactions and Lipid-Mediated Modulation of Membrane Protein Function through Molecular Simulation.Chemical reviews · 2019Review
- Challenges and advances in atomistic simulations of potassium and sodium ion channel gating and permeation.The Journal of physiology · 2019Review
- Contrasting the roles of the I-II loop gating brake in CaV3.1 and CaV3.3 calcium channels.Pflugers Archiv : European journal of physiology · 2015Article
- Atomistic study of lipid membranes containing chloroform: looking for a lipid-mediated mechanism of anesthesia.PloS one · 2013Article
- An emerging consensus on voltage-dependent gating from computational modeling and molecular dynamics simulations.The Journal of general physiology · 2012Article
- The sliding-helix voltage sensor: mesoscale views of a robust structure-function relationship.European biophysics journal : EBJ · 2012Article
- Computer Simulations of Voltage-Gated Cation Channels.The journal of physical chemistry letters · 2012Article
- Constant electric field simulations of the membrane potential illustrated with simple systems.Biochimica et biophysica acta · 2012Review
- Molecular dynamics investigation of the ω-current in the Kv1.2 voltage sensor domains.Biophysical journal · 2012Article
- Voltage-dependent gating of HERG potassium channels.Frontiers in pharmacology · 2012Article
- Molecular dynamics simulations of voltage-gated cation channels: insights on voltage-sensor domain function and modulation.Frontiers in pharmacology · 2012Article
- Ionic channels as targets for drug design: a review on computational methods.Pharmaceutics · 2011Article
- Structural dynamics of the S4 voltage-sensor helix in lipid bilayers lacking phosphate groups.The journal of physical chemistry. B · 2011Article
- Intermediate states of the Kv1.2 voltage sensor from atomistic molecular dynamics simulations.Proceedings of the National Academy of Sciences of the United States of America · 2011Article
- Interaction of diverse voltage sensor homologs with lipid bilayers revealed by self-assembly simulations.Biophysical journal · 2011Article
- Membrane insertion of a voltage sensor helix.Biophysical journal · 2011Article
- Effect of sensor domain mutations on the properties of voltage-gated ion channels: molecular dynamics studies of the potassium channel Kv1.2.Biophysical journal · 2010Article
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Authors and funding
2 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
In this article, we present the results of the molecular dynamics simulations of amphiphilic helix peptides of 13 amino-acid residues, placed at the lipid-water interface of dipalmitoylphosphatidylcholine bilayers. The peptides are identical with, or are derivatives of, the N-terminal segment of the S4 helix of voltage-dependent K channel KvAP, containing four voltage-sensing arginine residues (R1-R4). Upon changing the direction of the externally applied electric field, the tilt angle of the wild-type peptide changes relative to the lipid-water interface, with the N-terminus heading up with an outward electric field. These movements were not observed using an octane membrane in place of the dipalmitoylphosphatidylcholine membrane, and were markedly suppressed by 1), substituting Phe located one residue before the first arginine (R1) with a hydrophilic residue (Ser, Thr); or 2), changing the periodicity rule of Rs from at-every-third to at-every-fourth position; or 3), replacing R1 with a lysine residue (K). These and other findings suggest that the voltage-dependent movement requires deep positioning of Rs when the resting (inward) electric field is present. Later, we performed simulations of the voltage sensor domain (S1-S4) of Kv1.2 channel. In simulations with a strong electric field (0.1 V/nm or above) and positional restraints on the S1 and S2 helices, S4 movement was observed consisting of displacement along the S4 helix axis and a screwlike axial rotation. Gating-charge-carrying Rs were observed to make serial interactions with E183 in S1 and E226 in S2, in the outer water crevice. A 30-ns-backward simulation started from the open-state model gave rise to a structure similar to the recent resting-state model, with S4 moving vertically approximately 6.7 A. The energy landscape around the movement of S4 appears very ragged due to salt bridges formed between gating-charge-carrying residues and negatively charged residues of S1, S2, and S3 helices. Overall, features of S3 and S4 movements are consistent with the recent helical-screw model. Both forward and backward simulations show the presence of at least two stable intermediate structures in which R2 and R3 form salt bridges with E183 or E226, respectively. These structures are the candidates for the states postulated in previous gating kinetic models, such as the Zagotta-Hoshi-Aldrich model, to account for more than one transition step per subunit for activation.
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