ArticleBiophysical journal2006
The intrinsic flexibility of the Kv voltage sensor and its implications for channel gating.
Article in Biophysical journal, 2006. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 21 papers.
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Who cites it
21 citing papers in PubMed.
- Exploring Flexibility and Folding Patterns Throughout Time in Voltage Sensors.Journal of molecular evolution · 2023Article
- Sweetening K-channels: what sugar taught us about permeation and gating.Frontiers in molecular biosciences · 2023Review
- Illuminating Voltage Sensor Paddling in Different Membrane Milieu.Biophysical journal · 2020Article
- The Voltage-Dependent Deactivation of the KvAP Channel Involves the Breakage of Its S4 Helix.Frontiers in molecular biosciences · 2020Article
- Voltage vs. Ligand I: Structural basis of the intrinsic flexibility of S3 segment and its significance in ion channel activation.Channels (Austin, Tex.) · 2019Article
- Conservation analysis of residues in the S4-S5 linker and the terminal part of the S5-P-S6 pore modulus in Kv and HCN channels: flexible determinants for the electromechanical coupling.Pflugers Archiv : European journal of physiology · 2015Article
- Detergent-mediated protein aggregation.Chemistry and physics of lipids · 2013Review
- Modeling and simulation of ion channels.Chemical reviews · 2012Review
- Down-state model of the voltage-sensing domain of a potassium channel.Biophysical journal · 2010Article
- Potassium channel opening: a subtle two-step.The Journal of physiology · 2009Article
- Conformational changes and slow dynamics through microsecond polarized atomistic molecular simulation of an integral Kv1.2 ion channel.PLoS computational biology · 2009Article
- Double bilayers and transmembrane gradients: a molecular dynamics study of a highly charged peptide.Biophysical journal · 2008Article
- Molecular dynamics simulation of Kv channel voltage sensor helix in a lipid membrane with applied electric field.Biophysical journal · 2008Article
- The structure of the lipid-embedded potassium channel voltage sensor determined by double-electron-electron resonance spectroscopy.Protein science : a publication of the Protein Society · 2008Article
- Dynamics of the Kv1.2 voltage-gated K+ channel in a membrane environment.Biophysical journal · 2007Article
- Bilayer deformation by the Kv channel voltage sensor domain revealed by self-assembly simulations.Proceedings of the National Academy of Sciences of the United States of America · 2007Article
- Accessibility of four arginine residues on the S4 segment of the Bacillus halodurans sodium channel.The Journal of membrane biology · 2007Article
- How does a voltage sensor interact with a lipid bilayer? Simulations of a potassium channel domain.Structure (London, England : 1993) · 2007Article
- A voltage-sensor water pore.Biophysical journal · 2006Article
- Interaction between K+ channel gate modifier hanatoxin and lipid bilayer membranes analyzed by molecular dynamics simulation.European biophysics journal : EBJ · 2006Article
Corrections and comments
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3 authors.
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Abstract
Analysis of the crystal structures of the intact voltage-sensitive potassium channel KvAP (from Aeropyrum pernix) and Kv1.2 (from rat brain), along with the isolated voltage sensor (VS) domain from KvAP, raises the question of the exact nature of the voltage-sensing conformational change that triggers activation of Kv and related voltage-gated channels. Molecular dynamics simulations of the isolated VS of KvAP in a detergent micelle environment at two different temperatures (300 K and 368 K) have been used to probe the intrinsic flexibility of this domain on a tens-of-nanoseconds timescale. The VS contains a positively charged (S4) helix which is packed against a more hydrophobic S3 helix. The simulations at elevated temperature reveal an intrinsic flexibility/conformational instability of the S3a region (i.e., the C-terminus of the S3 helix). It is also evident that the S4 helix undergoes hinge bending and swiveling about its central I130 residue. The conformational instability of the S3a region facilitates the motion of the N-terminal segment of S4 (i.e., S4a). These simulations thus support a gating model in which, in response to depolarization, an S3b-S4a "paddle" may move relative to the rest of the VS domain. The flexible S3a region may in turn act to help restore the paddle to its initial conformation upon repolarization.
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